The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction
We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacan...
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sg-ntu-dr.10356-813432020-03-07T13:57:24Z The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction Zheng, K. Sun, Xiao Wei Teo, K. L. School of Electrical and Electronic Engineering Heterojunction Interface Filament Resistive switching Intrinsic defects We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaO x and p-NiO x , leading to the switching between Ohmic and diode characteristics of the device. ASTAR (Agency for Sci., Tech. and Research, S’pore) 2015-12-23T08:08:09Z 2019-12-06T14:28:50Z 2015-12-23T08:08:09Z 2019-12-06T14:28:50Z 2013 Journal Article Zheng, K., Sun, X. W., & Teo, K. L. (2013). The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction. Nanoscience and Nanotechnology Letters, 5(8), 868-871. 1941-4900 https://hdl.handle.net/10356/81343 http://hdl.handle.net/10220/39214 10.1166/nnl.2013.1626 en Nanoscience and Nanotechnology Letters © 2013 American Scientific Publishers. |
| institution |
Nanyang Technological University |
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NTU Library |
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Singapore |
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DR-NTU |
| language |
English |
| topic |
Heterojunction Interface Filament Resistive switching Intrinsic defects |
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Heterojunction Interface Filament Resistive switching Intrinsic defects Zheng, K. Sun, Xiao Wei Teo, K. L. The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction |
| description |
We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaO x and p-NiO x , leading to the switching between Ohmic and diode characteristics of the device. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Zheng, K. Sun, Xiao Wei Teo, K. L. |
| format |
Article |
| author |
Zheng, K. Sun, Xiao Wei Teo, K. L. |
| author_sort |
Zheng, K. |
| title |
The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction |
| title_short |
The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction |
| title_full |
The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction |
| title_fullStr |
The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction |
| title_full_unstemmed |
The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction |
| title_sort |
effect of intrinsic defects on resistive switching based on p–n heterojunction |
| publishDate |
2015 |
| url |
https://hdl.handle.net/10356/81343 http://hdl.handle.net/10220/39214 |
| _version_ |
1681035311071625216 |