The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction
We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacan...
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| Main Authors: | , , |
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| 格式: | Article |
| 語言: | English |
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2015
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| 在線閱讀: | https://hdl.handle.net/10356/81343 http://hdl.handle.net/10220/39214 |
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