Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

• المؤلفون الرئيسيون: Lee, Kwang Hong, Bao, Shuyu, Zhang, Li, Kohen, David, Fitzgerald, Eugene, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: CMOS integrated circuits; Gallium arsenide
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82889; http://hdl.handle.net/10220/42320

The integration of III–V semiconductors (e.g., GaAs and GaN) and silicon-on-insulator (SOI)-CMOS on a 200 mm Si substrate is demonstrated. The SOI-CMOS donor wafer is temporarily bonded on a Si handle wafer and thinned down. A second GaAs/Ge/Si substrate is then bonded to the SOI-CMOS-containing han...