0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization

• المؤلفون الرئيسيون: Do, Anh Tuan, Lee, Zhao Chuan, Wang, Bo, Chang, Ik-Joon, Liu, Xin, Kim, Tony Tae-Hyoung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Sensors; SRAM cells
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/84030; http://hdl.handle.net/10220/41563
• المؤسسة: Nanyang Technological University

In sub/near-threshold operation, SRAMs suffer from considerable bitline swing degradation when the data pattern of a column is skewed to ‘1’ or ‘0’. The worst scenarios regarding this problem occur when the currently read SRAM cell has different data compared to the rest of the cells in the same col...