Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

• Main Authors: Lee, Kwang Hong, Bao, Shuyu, Wang, Bing, Wang, Cong, Yoon, Soon Fatt, Michel, Jurgen, Fitzgerald, Eugene A., Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Germanium; Elemental semiconductors
• Online Access: https://hdl.handle.net/10356/84177; http://hdl.handle.net/10220/41651
• Institution: Nanyang Technological University

High quality germanium(Ge)epitaxialfilm is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) dopedGe seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C), (ii) Gegrowth with As gradually reduce...