Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

• Main Authors: Boo, A. A., Ang, Diing Shenp
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/85060; http://hdl.handle.net/10220/13459

We present experimental evidence of a thermally activated transformation of negative-bias-temperature-stress-induced transient hole trapping at preexisting oxide traps into more permanent trapped holes in the ultrathin oxynitride gate p-MOSFET. The transformation is also shown to correlate with the...