Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

• المؤلفون الرئيسيون: Boo, A. A., Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85060; http://hdl.handle.net/10220/13459
• المؤسسة: Nanyang Technological University

We present experimental evidence of a thermally activated transformation of negative-bias-temperature-stress-induced transient hole trapping at preexisting oxide traps into more permanent trapped holes in the ultrathin oxynitride gate p-MOSFET. The transformation is also shown to correlate with the...