Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter...

Full description

Saved in:
Bibliographic Details
Main Authors: Lai, Donny, Tan, Yew Heng, Gunawan, Oki, He, Lining, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2017
Subjects:
Epitaxy
Solar cells
Online Access:https://hdl.handle.net/10356/86545
http://hdl.handle.net/10220/44101
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-86545
record_format dspace
spelling sg-ntu-dr.10356-865452020-03-07T13:57:29Z Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy Lai, Donny Tan, Yew Heng Gunawan, Oki He, Lining Tan, Chuan Seng School of Electrical and Electronic Engineering Nanyang Nanofabrication Centre Epitaxy Solar cells We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells. Published version 2017-12-06T06:09:33Z 2019-12-06T16:24:24Z 2017-12-06T06:09:33Z 2019-12-06T16:24:24Z 2011 Journal Article Lai, D., Tan, Y. H., Gunawan, O., He, L., & Tan, C. S. (2011). Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy. Applied Physics Letters, 99(1), 011102-. 0003-6951 https://hdl.handle.net/10356/86545 http://hdl.handle.net/10220/44101 10.1063/1.3607303 en Applied Physics Letters © 2011 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.3607303]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Epitaxy
Solar cells
spellingShingle Epitaxy
Solar cells
Lai, Donny
Tan, Yew Heng
Gunawan, Oki
He, Lining
Tan, Chuan Seng
Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
description We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Lai, Donny
Tan, Yew Heng
Gunawan, Oki
He, Lining
Tan, Chuan Seng
format Article
author Lai, Donny
Tan, Yew Heng
Gunawan, Oki
He, Lining
Tan, Chuan Seng
author_sort Lai, Donny
title Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
title_short Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
title_full Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
title_fullStr Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
title_full_unstemmed Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
title_sort dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
publishDate 2017
url https://hdl.handle.net/10356/86545
http://hdl.handle.net/10220/44101
_version_ 1681044982264233984

Similar Items