Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter...
Saved in:
Main Authors: | , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2017
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/86545 http://hdl.handle.net/10220/44101 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Be the first to leave a comment!