Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

• المؤلفون الرئيسيون: Lai, Donny, Tan, Yew Heng, Gunawan, Oki, He, Lining, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: Epitaxy; Solar cells
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/86545; http://hdl.handle.net/10220/44101

We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter...