Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications

• المؤلفون الرئيسيون: Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: InAlN/GaN HEMTs; RF performance; DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/89717; http://hdl.handle.net/10220/47121
• المؤسسة: Nanyang Technological University

This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the temperature increases from 25 °C to 200 °C. For maximum fT, it drops to 87 GHz and 64 GHz at 100°C and 200°C respectively. These results show that although both DC and RF performances decrease with the increase in temperature, the device still exhibits high mm-wave performance at high temperatures. Thus, InAlN/GaN based HEMTs are very promising for high temperature mm-wave applications.