Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications
This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the tempe...
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Main Authors: | , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2018
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/89717 http://hdl.handle.net/10220/47121 |
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Institution: | Nanyang Technological University |
Language: | English |
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