Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications

• Main Authors: Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: InAlN/GaN HEMTs; RF performance; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/89717; http://hdl.handle.net/10220/47121
• Institution: Nanyang Technological University

This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the tempe...