Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si, Ti-O, Si-O, a...
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Main Authors: | , , , , |
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格式: | Article |
語言: | English |
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2012
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在線閱讀: | https://hdl.handle.net/10356/90572 http://hdl.handle.net/10220/7700 |
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機構: | Nanyang Technological University |
語言: | English |