Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films

Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si, Ti-O, Si-O, a...

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Main Authors: Lu, T. M., Law, S. B., Chen, Z., Ee, Elden Yong Chiang, Dong, Zhili
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2012
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在線閱讀:https://hdl.handle.net/10356/90572
http://hdl.handle.net/10220/7700
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機構: Nanyang Technological University
語言: English