Requirement for accurate interconnect temperature measurement for electromigration test

Requirement for accurate interconnect temperature measurement for electromigration test

In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect...

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Bibliographic Details
Main Authors: Hou, Yuejin, Tan, Cher Ming
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Online Access:https://hdl.handle.net/10356/90755
http://hdl.handle.net/10220/6394
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5403696
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect temperature variations are derived analytically and illustrated in Cu/low-k interconnects using finite element analysis (FEA) under typical experimental conditions. The derived formulations are verified by our previous experimental works.

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