Requirement for accurate interconnect temperature measurement for electromigration test

In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect...

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Main Authors:	Hou, Yuejin, Tan, Cher Ming
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Online Access:	https://hdl.handle.net/10356/90755 http://hdl.handle.net/10220/6394 http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5403696
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-907552019-12-06T17:53:24Z Requirement for accurate interconnect temperature measurement for electromigration test Hou, Yuejin Tan, Cher Ming School of Electrical and Electronic Engineering IEEE International Symposium on Integrated Circuits (12th : 2009 : Singapore) DRNTU::Engineering::Electrical and electronic engineering::Electronic systems In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect temperature variations are derived analytically and illustrated in Cu/low-k interconnects using finite element analysis (FEA) under typical experimental conditions. The derived formulations are verified by our previous experimental works. Published version 2010-09-02T07:18:05Z 2019-12-06T17:53:23Z 2010-09-02T07:18:05Z 2019-12-06T17:53:23Z 2009 2009 Conference Paper Hou, Y., & Tan, C. M. (2009). Requirement for accurate interconnect temperature measurement for electromigration test. In proceedings of the 12th International Symposium on Integrated Circuits: Singapore, (pp.522-525). https://hdl.handle.net/10356/90755 http://hdl.handle.net/10220/6394 http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5403696 en © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 4 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic systems Hou, Yuejin Tan, Cher Ming Requirement for accurate interconnect temperature measurement for electromigration test
description	In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect temperature variations are derived analytically and illustrated in Cu/low-k interconnects using finite element analysis (FEA) under typical experimental conditions. The derived formulations are verified by our previous experimental works.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Hou, Yuejin Tan, Cher Ming
format	Conference or Workshop Item
author	Hou, Yuejin Tan, Cher Ming
author_sort	Hou, Yuejin
title	Requirement for accurate interconnect temperature measurement for electromigration test
title_short	Requirement for accurate interconnect temperature measurement for electromigration test
title_full	Requirement for accurate interconnect temperature measurement for electromigration test
title_fullStr	Requirement for accurate interconnect temperature measurement for electromigration test
title_full_unstemmed	Requirement for accurate interconnect temperature measurement for electromigration test
title_sort	requirement for accurate interconnect temperature measurement for electromigration test
publishDate	2010
url	https://hdl.handle.net/10356/90755 http://hdl.handle.net/10220/6394 http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5403696
_version_	1681036832565886976

Requirement for accurate interconnect temperature measurement for electromigration test

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