Electrical characterization of dielectrically isolated silicon substrates containing buried metallic layers

• Main Authors: Goh, Wang Ling, Montgomery, J. H., Raza, S. H., Gamble, H. S., Armstrong, B. M.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/91578; http://hdl.handle.net/10220/6017
• Institution: Nanyang Technological University

Dielectrically isolated substrates containing buried highly conducting WSi2 layers are characterized for the first time using MOS capacitors. The active silicon layer is approximately 3 µm thick with a buried WSi2 layer 120 mm thick adjacent to the isolation layer. The buried metal forms the back co...