Electrical characterization of dielectrically isolated silicon substrates containing buried metallic layers

Electrical characterization of dielectrically isolated silicon substrates containing buried metallic layers

Dielectrically isolated substrates containing buried highly conducting WSi2 layers are characterized for the first time using MOS capacitors. The active silicon layer is approximately 3 µm thick with a buried WSi2 layer 120 mm thick adjacent to the isolation layer. The buried metal forms the back co...

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Bibliographic Details
Main Authors: Goh, Wang Ling, Montgomery, J. H., Raza, S. H., Gamble, H. S., Armstrong, B. M.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/91578
http://hdl.handle.net/10220/6017
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Institution: Nanyang Technological University
Language: English
Description
Summary:Dielectrically isolated substrates containing buried highly conducting WSi2 layers are characterized for the first time using MOS capacitors. The active silicon layer is approximately 3 µm thick with a buried WSi2 layer 120 mm thick adjacent to the isolation layer. The buried metal forms the back contact of the capacitor and excellent MOS characteristics are observed. Minority carrier lifetimes in excess of 200 µs were measured indicating the suitability of these substrates for use in device manufacture.

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