Electrical characterization of dielectrically isolated silicon substrates containing buried metallic layers
Dielectrically isolated substrates containing buried highly conducting WSi2 layers are characterized for the first time using MOS capacitors. The active silicon layer is approximately 3 µm thick with a buried WSi2 layer 120 mm thick adjacent to the isolation layer. The buried metal forms the back co...
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Main Authors: | Goh, Wang Ling, Montgomery, J. H., Raza, S. H., Gamble, H. S., Armstrong, B. M. |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2009
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/91578 http://hdl.handle.net/10220/6017 |
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Institution: | Nanyang Technological University |
Language: | English |
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