Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Sun, Handong, Clark, Antony H., Calvez, Stephane, Dawson, M. D., Shih, D. K., Lin, H. H.
مؤلفون آخرون: School of Physical and Mathematical Sciences
التنسيق: مقال
اللغة:English
منشور في: 2009
الموضوعات:
الوصول للمادة أونلاين:https://hdl.handle.net/10356/91710
http://hdl.handle.net/10220/6059
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici.
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المؤسسة: Nanyang Technological University
اللغة: English
الوصف
الملخص:We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.