Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is...
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sg-ntu-dr.10356-917102023-02-28T19:38:03Z Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Shih, D. K. Lin, H. H. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. Published version 2009-08-12T03:34:40Z 2019-12-06T18:10:35Z 2009-08-12T03:34:40Z 2019-12-06T18:10:35Z 2005 2005 Journal Article Sun, H. D., Clark, A. H., Calvez, S., Dawson M. D., Shih, D. K., Lin, H. H. (2005). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87(8), 1-3. 0003-6951 https://hdl.handle.net/10356/91710 http://hdl.handle.net/10220/6059 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici. 10.1063/1.2034119 en Applied Physics Letters. Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/. 3 p. application/pdf |
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DRNTU::Science::Physics::Optics and light Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Shih, D. K. Lin, H. H. Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
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We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. |
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School of Physical and Mathematical Sciences |
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School of Physical and Mathematical Sciences Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Shih, D. K. Lin, H. H. |
format |
Article |
author |
Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Shih, D. K. Lin, H. H. |
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Sun, Handong |
title |
Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
title_short |
Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
title_full |
Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
title_fullStr |
Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
title_full_unstemmed |
Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
title_sort |
photoluminescence characterization of midinfrared innxas1-x/in0.53ga0.47as/inp multiquantum wells with various n contents |
publishDate |
2009 |
url |
https://hdl.handle.net/10356/91710 http://hdl.handle.net/10220/6059 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici. |
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