Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment

The hybrid-mode operation of deep-submicron LDD pMOSFET’s has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this m...

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Main Authors:	Rofail, Samir S., Yeo, Kiat Seng
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/91739 http://hdl.handle.net/10220/4642
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-917392020-03-07T13:56:08Z Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment Rofail, Samir S. Yeo, Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The hybrid-mode operation of deep-submicron LDD pMOSFET’s has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this mode of operation were extracted and identified. The effects of independently biasing the source, drain, gate, and body potentials on the device currents and parameters were examined. The bodyinduced-barrier-lowering (BIBL) effect, which is one of the VSB effects and introduced for the first time, has been used to account for the changes in both the threshold voltage and the device currents caused by the forward source-body bias. Published version 2009-06-22T07:05:00Z 2019-12-06T18:11:08Z 2009-06-22T07:05:00Z 2019-12-06T18:11:08Z 1997 1997 Journal Article Rofail, S. S., & Yeo, K. S. (2000). Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment. IEEE Transactions on Electron Devices, 44(9), 1473-1482. 0018-9383 https://hdl.handle.net/10356/91739 http://hdl.handle.net/10220/4642 10.1109/16.622604 en IEEE transactions on electron devices © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 10 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Rofail, Samir S. Yeo, Kiat Seng Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment
description	The hybrid-mode operation of deep-submicron LDD pMOSFET’s has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this mode of operation were extracted and identified. The effects of independently biasing the source, drain, gate, and body potentials on the device currents and parameters were examined. The bodyinduced-barrier-lowering (BIBL) effect, which is one of the VSB effects and introduced for the first time, has been used to account for the changes in both the threshold voltage and the device currents caused by the forward source-body bias.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Rofail, Samir S. Yeo, Kiat Seng
format	Article
author	Rofail, Samir S. Yeo, Kiat Seng
author_sort	Rofail, Samir S.
title	Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment
title_short	Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment
title_full	Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment
title_fullStr	Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment
title_full_unstemmed	Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment
title_sort	experimentally-based analytical model of deep-submicron ldd pmosfet’s in a bi-mos hybrid-mode environment
publishDate	2009
url	https://hdl.handle.net/10356/91739 http://hdl.handle.net/10220/4642
_version_	1681045732391387136

Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment

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