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Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment

The hybrid-mode operation of deep-submicron LDD pMOSFET’s has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this m...

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Main Authors: Rofail, Samir S., Yeo, Kiat Seng
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2009
主題:
在線閱讀:https://hdl.handle.net/10356/91739
http://hdl.handle.net/10220/4642
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機構: Nanyang Technological University
語言: English