Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment
The hybrid-mode operation of deep-submicron LDD pMOSFET’s has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this m...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/91739 http://hdl.handle.net/10220/4642 |
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| Institution: | Nanyang Technological University |
| Language: | English |