Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

• المؤلفون الرئيسيون: Xu, C. D., Mei, Ting, Nie, Dong, Dong, Jian Rong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/92080; http://hdl.handle.net/10220/6409
• المؤسسة: Nanyang Technological University

Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 degrees celcius for 30 s. The annealing results in a maximum d...