N-type behavior of ferroelectric-gate carbon nanotube network transistor
Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spon...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/92415 http://hdl.handle.net/10220/6857 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of >10^2 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n-type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface. |
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