N-type behavior of ferroelectric-gate carbon nanotube network transistor

• المؤلفون الرئيسيون: Cheah, Jun Wei, Shi, Yumeng, Ong, Hock Guan, Lee, Chun Wei, Li, Lain-Jong, Wang, Junling
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Materials::Nanostructured materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/92415; http://hdl.handle.net/10220/6857

Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spon...