N-type behavior of ferroelectric-gate carbon nanotube network transistor

• Main Authors: Cheah, Jun Wei, Shi, Yumeng, Ong, Hock Guan, Lee, Chun Wei, Li, Lain-Jong, Wang, Junling
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Nanostructured materials
• Online Access: https://hdl.handle.net/10356/92415; http://hdl.handle.net/10220/6857
• Institution: Nanyang Technological University

Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of >10^2 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n-type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.