Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms

Tantalum silicon nitride ﬁlms have good potential to be used as hard coatings and diffusion barriers. In this work, ﬁlms with different composition were deposited using a magnetron sputter under varying nitrogen ﬂow rates. The composition, microstructure, thermal stability and electrical resis...

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Main Authors:	Xu, S., Chen, Z., Yan, H., Li, L., Ho, F. Y., Liang, M. H., Pan, J. S.
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2012
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:	https://hdl.handle.net/10356/94102 http://hdl.handle.net/10220/8204
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-941022023-07-14T15:53:32Z Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms Xu, S. Chen, Z. Yan, H. Li, L. Ho, F. Y. Liang, M. H. Pan, J. S. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Tantalum silicon nitride ﬁlms have good potential to be used as hard coatings and diffusion barriers. In this work, ﬁlms with different composition were deposited using a magnetron sputter under varying nitrogen ﬂow rates. The composition, microstructure, thermal stability and electrical resistivity have been investigated. In the as-deposited state, all ﬁlms consist of amorphous TaSixOy, TaxOy, TaxNy and TaSix compounds. The composition of ﬁlms is affected by N2 ﬂow rate. The resistivity of the as-deposited ﬁlms increases with N concentrations. At elevated temperatures, all ﬁlms show good thermal stability to at least 800 °C, while ﬁlm with high Si concentration is largely amorphous at 900 °C because of highly stable TaSixOy compounds. This study suggests that the TaSixOy compounds could be the key factor in enhancing thermal stability of Ta–Si–N–O ﬁlms. Accepted version 2012-06-19T06:15:37Z 2019-12-06T18:50:41Z 2012-06-19T06:15:37Z 2019-12-06T18:50:41Z 2009 2009 Journal Article Yan, H., Li, L., Ho, F. Y., Liang, M. H., Pan, J. S., Xu, S., & Chen, Z. (2009). Formation and characterization of magnetron sputtered Ta-Si-N-O thin films. Thin Solid Films, 517(17), 5207-5211. https://hdl.handle.net/10356/94102 http://hdl.handle.net/10220/8204 10.1016/j.tsf.2009.03.057 en Thin solid films © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.tsf.2009.03.057]. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Xu, S. Chen, Z. Yan, H. Li, L. Ho, F. Y. Liang, M. H. Pan, J. S. Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms
description	Tantalum silicon nitride ﬁlms have good potential to be used as hard coatings and diffusion barriers. In this work, ﬁlms with different composition were deposited using a magnetron sputter under varying nitrogen ﬂow rates. The composition, microstructure, thermal stability and electrical resistivity have been investigated. In the as-deposited state, all ﬁlms consist of amorphous TaSixOy, TaxOy, TaxNy and TaSix compounds. The composition of ﬁlms is affected by N2 ﬂow rate. The resistivity of the as-deposited ﬁlms increases with N concentrations. At elevated temperatures, all ﬁlms show good thermal stability to at least 800 °C, while ﬁlm with high Si concentration is largely amorphous at 900 °C because of highly stable TaSixOy compounds. This study suggests that the TaSixOy compounds could be the key factor in enhancing thermal stability of Ta–Si–N–O ﬁlms.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Xu, S. Chen, Z. Yan, H. Li, L. Ho, F. Y. Liang, M. H. Pan, J. S.
format	Article
author	Xu, S. Chen, Z. Yan, H. Li, L. Ho, F. Y. Liang, M. H. Pan, J. S.
author_sort	Xu, S.
title	Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms
title_short	Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms
title_full	Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms
title_fullStr	Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms
title_full_unstemmed	Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms
title_sort	formation and characterization of magnetron sputtered ta–si–n–o thin ﬁlms
publishDate	2012
url	https://hdl.handle.net/10356/94102 http://hdl.handle.net/10220/8204
_version_	1772828546944729088

Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms

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