Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder

Effect of electromigration on interfacial reactions between electroless Ni–P (EL-Ni) and eutectic Sn–3.5% Ag solder has been investigated. Sandwich-type reaction couples, Cu/EL-Ni/Sn–3.5% Ag/EL-Ni/Cu, having two EL-Ni/Sn–3.5% Ag interfaces were prepared with the help of reflow process. During reflow...

Full description

Saved in:
Bibliographic Details
Main Authors: Kumar, A., Teo, P. S., He, Min, Chen, Zhong
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/94742
http://hdl.handle.net/10220/8154
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-94742
record_format dspace
spelling sg-ntu-dr.10356-947422023-07-14T15:52:26Z Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder Kumar, A. Teo, P. S. He, Min Chen, Zhong School of Materials Science & Engineering DRNTU::Engineering::Materials Effect of electromigration on interfacial reactions between electroless Ni–P (EL-Ni) and eutectic Sn–3.5% Ag solder has been investigated. Sandwich-type reaction couples, Cu/EL-Ni/Sn–3.5% Ag/EL-Ni/Cu, having two EL-Ni/Sn–3.5% Ag interfaces were prepared with the help of reflow process. During reflow, Ni3Sn4 intermetallic formed at the EL-Ni/Sn–3.5% Ag interfaces with a dark thin Ni3P layer underneath it. The reaction couples were annealed at 160 and 180 °C for various durations with and without the passage of DC current of 1×103 A/cm2 density. It was found that current does not affect the stoichiometry of the intermetallics formed at the EL-Ni/Sn–3.5% Ag interfaces. The same Ni3Sn4 intermetallic formed in the samples annealed at both the temperatures with and without current. Formation of Kirkendall voids in the Ni3P layer showed that Ni diffuses from EL-Ni through the grain boundaries of Ni3P to form Ni3Sn4. It was observed that current retards the Ni3Sn4 growth at both the anode and cathode side interfaces at 180 °C, while no significant retardation was observed at 160 °C. This effect of electromigration on the EL-Ni/Sn–3.5% Ag interfacial reactions was due to the presence of Ni3P layer in between EL-Ni and Ni3Sn4. Accepted version 2012-05-28T06:53:58Z 2019-12-06T19:01:21Z 2012-05-28T06:53:58Z 2019-12-06T19:01:21Z 2004 2004 Journal Article Kumar, A., He, M., Chen, Z., & Teo, P. S. (2004). Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder. Thin Solid Films, 462-463, 413-418. https://hdl.handle.net/10356/94742 http://hdl.handle.net/10220/8154 10.1016/j.tsf.2004.05.042 en Thin solid films © 2004 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.tsf.2004.05.042]. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Kumar, A.
Teo, P. S.
He, Min
Chen, Zhong
Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder
description Effect of electromigration on interfacial reactions between electroless Ni–P (EL-Ni) and eutectic Sn–3.5% Ag solder has been investigated. Sandwich-type reaction couples, Cu/EL-Ni/Sn–3.5% Ag/EL-Ni/Cu, having two EL-Ni/Sn–3.5% Ag interfaces were prepared with the help of reflow process. During reflow, Ni3Sn4 intermetallic formed at the EL-Ni/Sn–3.5% Ag interfaces with a dark thin Ni3P layer underneath it. The reaction couples were annealed at 160 and 180 °C for various durations with and without the passage of DC current of 1×103 A/cm2 density. It was found that current does not affect the stoichiometry of the intermetallics formed at the EL-Ni/Sn–3.5% Ag interfaces. The same Ni3Sn4 intermetallic formed in the samples annealed at both the temperatures with and without current. Formation of Kirkendall voids in the Ni3P layer showed that Ni diffuses from EL-Ni through the grain boundaries of Ni3P to form Ni3Sn4. It was observed that current retards the Ni3Sn4 growth at both the anode and cathode side interfaces at 180 °C, while no significant retardation was observed at 160 °C. This effect of electromigration on the EL-Ni/Sn–3.5% Ag interfacial reactions was due to the presence of Ni3P layer in between EL-Ni and Ni3Sn4.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Kumar, A.
Teo, P. S.
He, Min
Chen, Zhong
format Article
author Kumar, A.
Teo, P. S.
He, Min
Chen, Zhong
author_sort Kumar, A.
title Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder
title_short Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder
title_full Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder
title_fullStr Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder
title_full_unstemmed Effect of electromigration on interfacial reactions between electroless Ni-P and Sn–3.5% Ag solder
title_sort effect of electromigration on interfacial reactions between electroless ni-p and sn–3.5% ag solder
publishDate 2012
url https://hdl.handle.net/10356/94742
http://hdl.handle.net/10220/8154
_version_ 1772827572436992000