Layer inversion of Ni(Pt)Si on mixed phase Si films

Layer inversion of Ni(Pt)Si on mixed phase Si films

The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded...

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Bibliographic Details
Main Authors: Osipowicz, T., See, A., Mangelinck, D., Lee, Pooi See, Pey, Kin Leong, Ding, Jun
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:https://hdl.handle.net/10356/94804
http://hdl.handle.net/10220/8097
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Institution: Nanyang Technological University
Language: English
Description
Summary:The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites.

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