Layer inversion of Ni(Pt)Si on mixed phase Si films

The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded...

Full description

Saved in:

Bibliographic Details
Main Authors:	Osipowicz, T., See, A., Mangelinck, D., Lee, Pooi See, Pey, Kin Leong, Ding, Jun
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2012
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:	https://hdl.handle.net/10356/94804 http://hdl.handle.net/10220/8097
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-94804
record_format	dspace
spelling	sg-ntu-dr.10356-948042023-07-14T15:53:15Z Layer inversion of Ni(Pt)Si on mixed phase Si films Osipowicz, T. See, A. Mangelinck, D. Lee, Pooi See Pey, Kin Leong Ding, Jun School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites. Published version 2012-05-18T07:22:55Z 2019-12-06T19:02:34Z 2012-05-18T07:22:55Z 2019-12-06T19:02:34Z 2002 2002 Journal Article Lee, P. S., Pey, K. L., Mangelick, D., Ding, J., Osipowicz, T., & See, A. (2002). Layer inversion of Ni(Pt)Si on mixed phase Si films. Electrochemical and Solid-State Letters, 5(3), G15-G17. https://hdl.handle.net/10356/94804 http://hdl.handle.net/10220/8097 10.1149/1.1447442 en Electrochemical and solid-state letters © 2002 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1447442. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Osipowicz, T. See, A. Mangelinck, D. Lee, Pooi See Pey, Kin Leong Ding, Jun Layer inversion of Ni(Pt)Si on mixed phase Si films
description	The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Osipowicz, T. See, A. Mangelinck, D. Lee, Pooi See Pey, Kin Leong Ding, Jun
format	Article
author	Osipowicz, T. See, A. Mangelinck, D. Lee, Pooi See Pey, Kin Leong Ding, Jun
author_sort	Osipowicz, T.
title	Layer inversion of Ni(Pt)Si on mixed phase Si films
title_short	Layer inversion of Ni(Pt)Si on mixed phase Si films
title_full	Layer inversion of Ni(Pt)Si on mixed phase Si films
title_fullStr	Layer inversion of Ni(Pt)Si on mixed phase Si films
title_full_unstemmed	Layer inversion of Ni(Pt)Si on mixed phase Si films
title_sort	layer inversion of ni(pt)si on mixed phase si films
publishDate	2012
url	https://hdl.handle.net/10356/94804 http://hdl.handle.net/10220/8097
_version_	1772826702070677504

Layer inversion of Ni(Pt)Si on mixed phase Si films

Similar Items