Layer inversion of Ni(Pt)Si on mixed phase Si films

• Main Authors: Osipowicz, T., See, A., Mangelinck, D., Lee, Pooi See, Pey, Kin Leong, Ding, Jun
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/94804; http://hdl.handle.net/10220/8097
• Institution: Nanyang Technological University

The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded...