Layer inversion of Ni(Pt)Si on mixed phase Si films
The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2012
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/94804 http://hdl.handle.net/10220/8097 |
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Institution: | Nanyang Technological University |
Language: | English |
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