Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test

• المؤلفون الرئيسيون: Prasad, K., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Chen, Zhong, Zhang, Sam, Chen, Zhe
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95351; http://hdl.handle.net/10220/8218
• المؤسسة: Nanyang Technological University

Adhesion between barrier layers and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers leading to device failure. As the sizes of transistors are scaled down to submicron regime, new materials an...