High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures

High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures

Si nanostructures: A new method for fabricating large-area Si nanostructures in a high-throughput fashion has been demonstrated. The procedure is based upon dip-pen nanolithography in combination with wet-chemical etching and reactive ion etching. Multipen techniques have been demonstrated for the f...

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Bibliographic Details
Main Authors: Fragala, Joseph, Zhang, Hua, Disawal, Sandeep, Elghanian, Robert, Shile, Roger, Amro, Nabil A.
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/95378
http://hdl.handle.net/10220/8613
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Institution: Nanyang Technological University
Language: English
Description
Summary:Si nanostructures: A new method for fabricating large-area Si nanostructures in a high-throughput fashion has been demonstrated. The procedure is based upon dip-pen nanolithography in combination with wet-chemical etching and reactive ion etching. Multipen techniques have been demonstrated for the fabrication of large-area Si nanostructure arrays (see AFM image; dot 1: diameter/height=1460/140 nm; dot 9: diameter/height=385/75 nm).

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