Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

• المؤلفون الرئيسيون: Tang, L. J., Tan, Eu Jin, Pey, Kin Leong, Chi, Dong Zhi, Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95651; http://hdl.handle.net/10220/8338
• المؤسسة: Nanyang Technological University

Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are like...