Sensing margin enhancement techniques for ultra-low-voltage SRAMs utilizing a bitline-boosting current and equalized bitline leakage

• المؤلفون الرئيسيون: Do, Anh Tuan, Nguyen, Truc Quynh, Yeo, Kiat Seng, Kim, Tony Tae-Hyoung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95955; http://hdl.handle.net/10220/11361

A small bitline sensing margin is one of the most challenging design obstacles for reliable ultra-low-voltage static random access memory (SRAM) implementation. This paper presents design techniques for bitline sensing margin enhancement using decoupled SRAMs. The proposed bitline-boosting current s...