Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
In this letter, the effect of Ge diffusion at the gate area of AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a thin silicon-on-insulator (SOI) substrate has been investigated. The pinch-off voltage shifted toward enhancement mode type operation behavior due to the Ge diffusion through...
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2014
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sg-ntu-dr.10356-960082020-03-07T13:56:09Z Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator Bera, L. K. Tham, W. H. Kajen, R. S. Dolmanan, S. B. Kumar, M. Krishna Lin, Vivian Kaixin Ang, Diing Shenp Bhat, T. N. Yakovlev, N. Tripathy, Sudhiranjan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering In this letter, the effect of Ge diffusion at the gate area of AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a thin silicon-on-insulator (SOI) substrate has been investigated. The pinch-off voltage shifted toward enhancement mode type operation behavior due to the Ge diffusion through the surface of the thin GaN cap layer. An anomalous hump observed in high frequency C-V plot is due to the electron confinement at the Ge-GaN/AlGaN interface. The threshold voltage reduces by 0.8 to 1.0 V after Ge diffusion. The drive current and the transconductance further reduced as compared to the control sample due to the parallel channel formation at the top Ge-GaN/AlxGa1-xN interfaces. Published version 2014-01-03T03:29:44Z 2019-12-06T19:24:22Z 2014-01-03T03:29:44Z 2019-12-06T19:24:22Z 2013 2013 Journal Article Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Kumar, M. K., Lin, V. K. X., et al. (2013). Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator. ECS solid state letters, 2(12), Q105-Q108. https://hdl.handle.net/10356/96008 http://hdl.handle.net/10220/18382 10.1149/2.002312ssl en ECS solid state letters © 2013 The Electrochemical Society. This paper was published in ECS Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/2.002312ssl]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Bera, L. K. Tham, W. H. Kajen, R. S. Dolmanan, S. B. Kumar, M. Krishna Lin, Vivian Kaixin Ang, Diing Shenp Bhat, T. N. Yakovlev, N. Tripathy, Sudhiranjan Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator |
| description |
In this letter, the effect of Ge diffusion at the gate area of AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a thin silicon-on-insulator (SOI) substrate has been investigated. The pinch-off voltage shifted toward enhancement mode type operation behavior due to the Ge diffusion through the surface of the thin GaN cap layer. An anomalous hump observed in high frequency C-V plot is due to the electron confinement at the Ge-GaN/AlGaN interface. The threshold voltage reduces by 0.8 to 1.0 V after Ge diffusion. The drive current and the transconductance further reduced as compared to the control sample due to the parallel channel formation at the top Ge-GaN/AlxGa1-xN interfaces. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Bera, L. K. Tham, W. H. Kajen, R. S. Dolmanan, S. B. Kumar, M. Krishna Lin, Vivian Kaixin Ang, Diing Shenp Bhat, T. N. Yakovlev, N. Tripathy, Sudhiranjan |
| format |
Article |
| author |
Bera, L. K. Tham, W. H. Kajen, R. S. Dolmanan, S. B. Kumar, M. Krishna Lin, Vivian Kaixin Ang, Diing Shenp Bhat, T. N. Yakovlev, N. Tripathy, Sudhiranjan |
| author_sort |
Bera, L. K. |
| title |
Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator |
| title_short |
Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator |
| title_full |
Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator |
| title_fullStr |
Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator |
| title_full_unstemmed |
Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator |
| title_sort |
effect of ge diffusion on alxga1-xn/gan high electron mobility transistors on a thin silicon-on-insulator |
| publishDate |
2014 |
| url |
https://hdl.handle.net/10356/96008 http://hdl.handle.net/10220/18382 |
| _version_ |
1681034347205885952 |