Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
In this letter, the effect of Ge diffusion at the gate area of AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a thin silicon-on-insulator (SOI) substrate has been investigated. The pinch-off voltage shifted toward enhancement mode type operation behavior due to the Ge diffusion through...
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Main Authors: | Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Kumar, M. Krishna, Lin, Vivian Kaixin, Ang, Diing Shenp, Bhat, T. N., Yakovlev, N., Tripathy, Sudhiranjan |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2014
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/96008 http://hdl.handle.net/10220/18382 |
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Institution: | Nanyang Technological University |
Language: | English |
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