Mechanism of different switching directions in graphene oxide based RRAM

Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These swit...

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Main Authors: Wang, Zhongrui, Tjoa, Verawati, Wu, L., Liu, W. J., Fang, Z., Tran, Xuan Anh, Wei, J., Zhu, W. G., Yu, Hongyu
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/96219
http://hdl.handle.net/10220/10205
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-962192020-03-07T14:02:41Z Mechanism of different switching directions in graphene oxide based RRAM Wang, Zhongrui Tjoa, Verawati Wu, L. Liu, W. J. Fang, Z. Tran, Xuan Anh Wei, J. Zhu, W. G. Yu, Hongyu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorption/release and electrode metal ions diffusion play important roles in bipolar resistive switching of GO. Published version 2013-06-12T01:04:36Z 2019-12-06T19:27:27Z 2013-06-12T01:04:36Z 2019-12-06T19:27:27Z 2012 2012 Journal Article Wang, Z., Tjoa, V., Wu, L., Liu, W. J., Fang, Z., Tran, X. A., et al. (2012). Mechanism of different switching directions in graphene oxide based RRAM. Journal of the electrochemical society, 159(6), K177-K182. 0013-4651 https://hdl.handle.net/10356/96219 http://hdl.handle.net/10220/10205 10.1149/2.068206jes en Journal of the electrochemical society © 2012 The Electrochemical Society.This paper was published in Journal of The Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/2.068206jes].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Wang, Zhongrui
Tjoa, Verawati
Wu, L.
Liu, W. J.
Fang, Z.
Tran, Xuan Anh
Wei, J.
Zhu, W. G.
Yu, Hongyu
Mechanism of different switching directions in graphene oxide based RRAM
description Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorption/release and electrode metal ions diffusion play important roles in bipolar resistive switching of GO.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wang, Zhongrui
Tjoa, Verawati
Wu, L.
Liu, W. J.
Fang, Z.
Tran, Xuan Anh
Wei, J.
Zhu, W. G.
Yu, Hongyu
format Article
author Wang, Zhongrui
Tjoa, Verawati
Wu, L.
Liu, W. J.
Fang, Z.
Tran, Xuan Anh
Wei, J.
Zhu, W. G.
Yu, Hongyu
author_sort Wang, Zhongrui
title Mechanism of different switching directions in graphene oxide based RRAM
title_short Mechanism of different switching directions in graphene oxide based RRAM
title_full Mechanism of different switching directions in graphene oxide based RRAM
title_fullStr Mechanism of different switching directions in graphene oxide based RRAM
title_full_unstemmed Mechanism of different switching directions in graphene oxide based RRAM
title_sort mechanism of different switching directions in graphene oxide based rram
publishDate 2013
url https://hdl.handle.net/10356/96219
http://hdl.handle.net/10220/10205
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