Mechanism of different switching directions in graphene oxide based RRAM

Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These swit...

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Bibliographic Details
Main Authors: Wang, Zhongrui, Tjoa, Verawati, Wu, L., Liu, W. J., Fang, Z., Tran, Xuan Anh, Wei, J., Zhu, W. G., Yu, Hongyu
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/96219
http://hdl.handle.net/10220/10205
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Institution: Nanyang Technological University
Language: English
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