Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
We report a triggering voltage Vtrig for observing gate leakage current (Ig) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. Vtrig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlle...
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/96328 http://hdl.handle.net/10220/10027 |
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Institution: | Nanyang Technological University |
Language: | English |