Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

We report a triggering voltage Vtrig for observing gate leakage current (Ig) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. Vtrig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlle...

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Bibliographic Details
Main Authors: Liu, W. H., Pey, Kin Leong, Raghavan, Nagarajan, Wu, X., Bosman, Michel
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/96328
http://hdl.handle.net/10220/10027
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Institution: Nanyang Technological University
Language: English

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