Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

• Main Authors: Liu, W. H., Pey, Kin Leong, Raghavan, Nagarajan, Wu, X., Bosman, Michel
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
• Online Access: https://hdl.handle.net/10356/96328; http://hdl.handle.net/10220/10027
• Institution: Nanyang Technological University

We report a triggering voltage Vtrig for observing gate leakage current (Ig) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. Vtrig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlle...