Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers

Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits...

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Main Authors: Kusuma, Damar Yoga, Lee, Pooi See
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2013
在線閱讀:https://hdl.handle.net/10356/97095
http://hdl.handle.net/10220/10458
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總結:Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.