Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers
Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits...
Saved in:
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Online Access: | https://hdl.handle.net/10356/97095 http://hdl.handle.net/10220/10458 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |