Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers

• Main Authors: Kusuma, Damar Yoga, Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/97095; http://hdl.handle.net/10220/10458
• Institution: Nanyang Technological University

Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits...