Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers
Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits...
Saved in:
| Main Authors: | , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2013
|
| 在線閱讀: | https://hdl.handle.net/10356/97095 http://hdl.handle.net/10220/10458 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| id |
sg-ntu-dr.10356-97095 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-970952020-06-01T10:13:35Z Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers Kusuma, Damar Yoga Lee, Pooi See School of Materials Science & Engineering Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use. 2013-06-17T07:15:00Z 2019-12-06T19:38:55Z 2013-06-17T07:15:00Z 2019-12-06T19:38:55Z 2012 2012 Journal Article Kusuma, D. Y., & Lee, P. S. (2012). Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers. Advanced Materials, 24(30), 4163-4169. 1521-4095 https://hdl.handle.net/10356/97095 http://hdl.handle.net/10220/10458 10.1002/adma.201104476 en Advanced materials © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| description |
Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Kusuma, Damar Yoga Lee, Pooi See |
| format |
Article |
| author |
Kusuma, Damar Yoga Lee, Pooi See |
| spellingShingle |
Kusuma, Damar Yoga Lee, Pooi See Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| author_sort |
Kusuma, Damar Yoga |
| title |
Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_short |
Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_full |
Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_fullStr |
Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_full_unstemmed |
Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_sort |
ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/97095 http://hdl.handle.net/10220/10458 |
| _version_ |
1681056868383850496 |