Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics

• Main Authors: Yuan, C. L., Darmawan, P., Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/97197; http://hdl.handle.net/10220/10504
• Institution: Nanyang Technological University

Amorphous Lu2O3 high-k gate dielectrics were grown directly on n-type (100) Si substrates by the pulsed laser deposition (PLD) technique. High-resolution transmission electron microscope (HRTEM) observation illustrated that the Lu2O3 film has amorphous structure and the interface with Si substrate i...